Next-generation power semiconductors compete fiercely

Compared with current Si (silicon) power semiconductors, new generation power semiconductors such as SiC (silicon carbide) and GaN (gallium nitride) are expected to significantly increase efficiency and reduce size using inverters and converters. In 2013, the use of SiC power devices and GaN power devices has gradually increased. At the same time, companies have also developed fierce competition around these components.

In SiC power semiconductors, the development of trench MOSFETs with channels on the gates has accelerated significantly in 2013. The previously introduced SiC MOSFETs are only planar and have not yet introduced channel types. The on-resistance of the trench MOSFET is only a fraction of that of the planar type, so the loss can be further reduced. After the on-resistance is reduced, the same ampacity can be obtained with a smaller chip area than the planar type. In other words, it can cut costs.

Due to the above characteristics of channel MOSFETs, each semiconductor manufacturer in Japan regards it as “the first candidate for transistors that can fully utilize SiC's advantages” and has officially started research and development. This trend was fully reflected in the ICS-related International Society "ICSCRM2013" held from September 29 to October 4, 2013. At this meeting, companies have announced the latest developments in trench SiC MOSFETs. Such as Roma, Sumitomo Electric Industry and Mitsubishi Electric. Among them, Roma seems to be at the forefront in terms of practicality. In the first half of 2014, the company will launch "dual-channel" SiC MOSFETs with both a gate and a source.

SiC is expected by the automotive industry. For example, Denso is developing its own SiC substrate and power components. Of course, the company is also developing trench MOSFETs and announced that it will launch products in 2015.

Major Japanese companies have launched GaN power components business GaN power components, the Japanese companies have released new products, there are many companies announced their involvement in power components business. Among them, the most significant change is a 600V GaN power transistor. The power transistor with a withstand voltage of 600V can be used in white goods such as air conditioners and induction cookers, inverters for hybrid and pure electric vehicles, and power converters with output power ranging from several hundred to tens of thousands of watts such as photovoltaic inverters and industrial equipment.

In the past, the withstand voltage of GaN power transistors was mostly below 200V, and only Transvorm Corporation was able to reach a practical level of 600V. In 2013, Panasonic and Sharp announced their involvement in the GaN power component business. The former started sampling and supplying 600V products in March 2013. The latter began sampling and supplying 600V products in April 2013. In addition, International Rectifier (IR) Corporation and EPC Corporation are also conducting research and development to achieve the practical application of a voltage-resistant 600V product.

Fujitsu Semiconductor has also started sampling and supplying GaN power transistors. In November 2013, the company signed an agreement with Transphorm to incorporate the GaN power device business. After the merger of the two companies, Transphorm will develop GaN power devices manufactured by Fujitsu Semiconductor.

Asian companies are also involved in the aforementioned companies is only a small part of it, in addition there are many companies set out to develop GaN power components, ready to carry out related businesses. In the future, among semiconductor manufacturers engaged in GaN power devices, it is estimated that fierce price competition will occur.

In particular, Asian semiconductor companies such as South Korea, China, and Taiwan are all involved in the GaN power component business, and price competition will become even fiercer. The production of GaN power semiconductors can continue to use production equipment that supports products such as logic ICs and supports 6- to 8-inch Si substrates, and GaN-based semiconductor epitaxy devices introduced to LEDs, which will push Asian companies into the market.

In fact, at the International Symposium on Power Semiconductors held in May 2013, “ISPSD2013”, Asian companies in Mainland China, Taiwan, and South Korea released research results on GaN power components. Among them, the results of Samsung Electronics have attracted much attention. The company has trial-produced GaN power transistors on 200mm (8-inch) Si substrates.

Samsung Electronics is currently working on research and development in the power semiconductor industry. The company sold power ICs to Fairchild Semiconductor in 1998, but it also established the power semiconductors division two years ago.

Not only is the GaN power semiconductor field, but also in the SiC power semiconductor field, the strength of Asian companies outside of Japan is gradually increasing. In fact, more and more companies are preparing to produce SiC substrates and diodes, and the performance is particularly prominent in the field of SiC substrates.

For example, at the aforementioned ICSCRM2013, Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd., Shandong Tianyue Advanced Materials Technology Co., Ltd. and South Korea's SKC Corporation have all announced that they are developing 150mm (6-inch) SiC substrates. Only a few years ago, the only Asian company involved in this field was Beijing Tiankeheda Blu-ray. Now the situation has changed.

In 2014, we also need to focus on the trends of Asian companies in the power semiconductor industry.